d-490
st303s series d-492 st303s 50 voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. v v ma 04 400 500 08 800 900 10 1000 1100 12 1200 1300 electrical specifications voltage ratings frequency units 50hz 670 470 1050 940 5240 4300 400hz 480 330 1021 710 1800 1270 1000hz 230 140 760 470 730 430 a 2500hz 35 - 150 - 90 - recovery voltage vr 50 50 50 50 50 50 volta ge before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ m s case temperature 40 65 40 65 40 65 c equivalent values for rc circuit 10 w / 0.47f 10 w / 0.47f 10 w / 0.47f i tm 180 o el 180 o el 100 m s i tm i tm current carrying capability v i t(av) max. average on-state current 300 a 180 conduction, half sine wave @ case temperature 65 c i t(rms) max. rms on-state current 471 dc @ 45c case temperature i tsm max. peak, one half cycle, 7950 t = 10ms no voltage non-repetitive surge current 8320 a t = 8.3ms reapplied 6690 t = 10m s 100% v rrm 7000 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 316 t = 10ms no voltage initial t j = t j max 288 t = 8.3 ms reapplied 224 t = 10ms 100% v rrm 204 t = 8.3ms rea pplied i 2 ? t maximum i 2 ? t for fusing 3160 ka 2 ? s t = 0.1 to 10ms, no voltage reapplied parameter st303s units conditions on-state conduction ka 2 s
st303s series d-496 fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics
st303s series d- 497 fig. 8 - thermal impedance z thjc characteristic fig. 9 - reverse recovered charge characteristics fig. 10 - reverse recovery current characteristics fig. 7 - on-state voltage drop characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current
st303s series d-498 fig. 13 - frequency characteristics fig. 12 - frequency characteristics fig. 11 - frequency characteristics
st303s series d- 499 fig. 15 - gate characteristics fig. 14 - maximum on-state energy power loss characteristics
st303s series d-493 v tm max. peak on-state voltage 2.16 i tm = 1255a, t j = t j max , t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25c, i t > 30a i l typical latching current 1000 t j = 25c, v a = 12v, ra = 6 w, i g = 1a parameter st303s units conditions on-state conduction 1.44 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.46 (i > p x i t(av) ) , t j = t j max. v 0.57 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 0.56 (i > p x i t(av) ) , t j = t j max. m w ma di/dt max. non-repetitive rate of rise t j = t j max , v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load, gate pulse: 10v, 5 w source t j = t j max , i tm = 550a, commutating di/dt = 40a/s v r = 50v, t p = 500s, dv/dt: see table in device code switching parameter st303s units conditions 1000 a/s t d typical delay time 0.80 s min max dv/dt maximum critical rate of rise of t j = t j max, linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st303s units conditions blocking 500 v/ m s 50 ma t j = t j max , rated v drm /v rrm applied p gm maximum peak gate power 60 p g(av) maximum average gate power 10 i gm max. peak positive gate current 10 a t j = t j max , t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st303s units conditions 20 5 v t j = t j max , t p 5ms 200 ma 3 v t j = 25c, v a = 12v, ra = 6 w t j = t j max , rated v drm applied (*) t q = 10 to 20s for 400 to 800v devices; t q = 15 to 30s for 1000 to 1200v devices. t q max. turn-off time (*) 10 30 w t j = t j max , f = 50hz, d% = 50
st303s series d-494 t j max. junction operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r t hjc max. thermal resistance, junction to case 0.10 dc operation r t hcs ma x. thermal resistance, case to heatsink 0.03 mounting surface, smooth, flat and greased t mounting torque, 10% 48.5 nm (425) (i bf-in) wt approximate weight 535 g case style to-209ae (to-118) see outline table parameter st303s units conditions thermal and mechanical specifications c k/w non lubricated threads d r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) ordering information table 5 6 8 9 st 30 3 s 12 p f n 0 3 4 7 device code 1 2 10 180 0.011 0.008 120 0.013 0.014 90 0.017 0.018 k/w t j = t j max. 60 0.025 0.026 30 0.041 0.042 conduction angle sinusoidal conduction rectangular conduction units conditions 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4" 16unf-2a m = stud base metric threads m24 x 1.5 7 - reapplied dv/dt code (for t q test condition) 8 - t q code 9 - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) 3 = threaded top terminal 3/8" 24unf-2a - critical dv/dt: none = 500v/sec (standard value) l = 1000v/ sec (special selection) only for 1000/1200v dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 t q (s) 10 cn dn en fn * hn 12 cm dm em fm hm 15 cl dl el fl * hl 20 ck dk ek fk * hk t q (s) 15 cl -- -- -- -- 18 cp dp -- -- -- 20 ck dk ek fk * hk 25 cj dj ej fj * hj 30 -- dh eh fh hh up to 800v * standard part number. all other types available only on request. 10
st303s series d-495 outline table case style to-209ae (to-118) with top thread terminal 3/8" all dimensions in millimeters (inches) red cathode red silicon rubber 10.5 (0.41) 2 4 5 ( 9 . 6 5 ) 1 0 ( 0 . 3 9 ) white gate 4.3 (0.17) dia. ceramic housing white shrink nom. 4 7 ( 1 . 8 5 ) m a x . 2 4 5 ( 9 . 6 5 ) 38 (1.50) max. dia. * for metric device: m24 x 1.5 - lenght screw 21 (0.83) max. 22 (0.87) max. m a x . 2 1 ( 0 . 8 2 ) m a x . sw 45 2 flexible lead 4.5 (0.18) max. c.s. 50mm (0.078 s.i.) 2 5 5 ( 1 0 . 0 4 ) red shrink 2 2 ( 0 . 8 6 ) m i n . 49 (1.92) max. 3/4"16 unf-2a 2 7 . 5 ( 1 . 0 8 ) 9 . 5 ( 0 . 3 7 ) m i n . fast-on terminals case style to-209ae (to-118) all dimensions in millimeters (inches) 4 7 ( 1 . 8 5 ) 2 7 . 5 ( 1 . 0 8 ) 7 7 . 5 ( 3 . 0 5 ) 8 0 . 5 ( 3 . 1 7 ) 38 (1.5) dia. max. m a x . m a x . m a x . ceramic housing sw 45 * for metric device: m24 x 1.5 - lenght screw 21 (0.83) max. 2 1 ( 0 . 8 3 ) 3/4"-16unf-2a * 2 5 ( 0 . 9 8 ) 3/8"-24unf-2a 17 (0.67) dia. amp. 280000-1 ref-250
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